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CY7C1329
64K x 32 Synchronous-Pipelined Cache RAM
Features
* Supports 133-MHz bus for Pentium and PowerPC operations with zero wait states * Fully registered inputs and outputs for pipelined operation * 64K x 32 common I/O architecture * Single 3.3V power supply * Fast clock-to-output times -- 4.2 ns (for 133-MHz device) -- 5.5 ns (for 100-MHz device) * User-selectable burst counter supporting Intel(R) Pentium interleaved or linear burst sequences * Separate processor and controller address strobes * Synchronous self-timed writes * Asynchronous output enable * JEDEC-standard 100-lead TQFP pinout * "ZZ" Sleep Mode option and Stop Clock option All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise is 4.2 ns (133-MHz device). The CY7C1329 supports either the interleaved burst sequence used by the Intel Pentium processor or a linear burst sequence used by processors such as the PowerPC. The burst sequence is selected through the MODE pin. Accesses can be initiated by asserting either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC) at clock rise. Address advancement through the burst sequence is controlled by the ADV input. A 2-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the four Byte Write Select (BW[3:0]) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All writes are conducted with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to provide proper data during depth expansion, OE is masked during the first clock of a Read cycle when emerging from a deselected state.
Functional Description
The CY7C1329 is a 3.3V, 64K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic.
Logic Block Diagram
CLK ADV ADSC ADSP A[15:0] GW BWE BW 3 BW2 BW1
MODE (A[1:0]) 2 BURST Q0 CE COUNTER Q1 CLR ADDRESS CE REGISTER D D Q 14 16
16
14
DQ[31:24] Q BYTEWRITE REGISTERS
64K x 32 Memory Array
D DQ[23:16] Q BYTEWRITE REGISTERS D D Q DQ[15:8] BYTEWRITE REGISTERS Q DQ[7:0] BYTEWRITE REGISTERS
BW0 CE1 CE2 CE3
32
32
D ENABLE Q CE REGISTER CLK D Q ENABLE DELAY REGISTER CLK OUTPUT REGISTERS CLK INPUT REGISTERS CLK
OE ZZ SLEEP CONTROL DQ[31:0]
Cypress Semiconductor Corporation Document #: 38-05279 Rev. *B
*
3901 North First Street
*
San Jose, CA 95134
* 408-943-2600 Revised March 31, 2004
CY7C1329
Pin Configuration 100-pin TQFP
A6 A7 CE1 CE2 BW3 BW2 BW1 BW0 CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A8 A9 NC DQ16 DQ17 VDDQ VSSQ DQ18 DQ19 DQ20 DQ21 VSSQ VDDQ DQ22 DQ23 NC VDD NC VSS DQ24 DQ25 VDDQ VSSQ DQ26 DQ27 DQ28 DQ29 VSSQ VDDQ DQ30 DQ31 NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
BYTE2
BYTE3
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1329
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
NC DQ15 DQ14 VDDQ VSSQ DQ13 DQ12 DQ11 DQ10 VSSQ VDDQ DQ9 DQ8 VSS NC VDD ZZ DQ7 DQ6 VDDQ VSSQ DQ5 DQ4 DQ3 DQ2 VSSQ VDDQ DQ1 DQ0 NC
BYTE1
BYTE0
Selection Guide
7C1329-133 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Commercial Commercial 4.2 325 5 7C1329-100 5.5 310 5 Unit ns mA mA
Document #: 38-05279 Rev. *B
MODE A5 A4 A3 A2 A1 A0 NC NC VSS VDD NC NC A10 A11 A12 A13 A14 A15 NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
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CY7C1329
Pin Definitions
Pin Number Name I/O InputSynchronous InputSynchronous InputSynchronous InputSynchronous Input-Clock InputSynchronous InputSynchronous InputSynchronous Description Address Inputs used to select one of the 64K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global Write is conducted (ALL bytes are written, regardless of the values on BW[3:0] and BWE). Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a Byte Write. Clock input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. 49-44, 81,82, A[15:0] 99, 100, 32-37 96-93 88 BW[3:0] GW
87 89 98 97 92 86
BWE CLK CE1 CE2 CE3 OE
InputOutput Enable, asynchronous input, active LOW. Controls the direction of the Asynchronous I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state. InputSynchronous InputSynchronous Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically increments the address in a burst cycle. Address Strobe from Processor, sampled on the rising edge of CLK. When asserted LOW, A[15:0] is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. Address Strobe from Controller, sampled on the rising edge of CLK. When asserted LOW, A[15:0] is captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
83 84
ADV ADSP
85
ADSC
InputSynchronous
64
ZZ
InputZZ "sleep" Input. This active HIGH input places the device in a non-time-critical Asynchronous "sleep" condition with data integrity preserved. I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[15:0] during the previous clock rise of the Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ[31:0] are placed in a three-state condition.
29, 28, 25-22, DQ[31:0] 19, 18,13,12, 9-6, 3, 2, 79, 78, 75-72, 69, 68, 63, 62 59-56, 53, 52 15, 41, 65, 91 VDD 17, 40, 67, 90 VSS 4, 11, 20, 27, VDDQ 54, 61, 70, 77 5, 10, 21, 26, VSSQ 55, 60, 71, 76 31 MODE
Power Supply Power supply inputs to the core of the device. Should be connected to 3.3V power supply. Ground I/O Power Supply I/O Ground InputStatic - Ground for the core of the device. Should be connected to ground of the system. Power supply for the I/O circuitry. Should be connected to a 3.3V power supply. Ground for the I/O circuitry. Should be connected to ground of the system. Selects burst order. When tied to GND selects linear burst sequence. When tied to VDDQ or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. No Connects.
1, 14, 16, 30, NC 38, 39, 42, 43, 50, 51, 66, 80
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CY7C1329
Introduction
Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 4.2 ns (133-MHz device). The CY7C1329 supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[3:0]) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the Write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A[15:0]) is stored into the address advancement logic and the Address Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 4.2 ns (133-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single Read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A[15:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The Write signals (GW, BWE, and BW0-BW3) and ADV inputs are ignored during this first cycle. ADSP triggered Write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQ[31:0] inputs is written into the corresponding address location in the RAM core. If GW is HIGH, then the Write operation is controlled by BWE and BW[3:0] signals. The CY7C1329 provides Byte Write capability that is described in the Write Cycle Description table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BW[3:0]) input will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1329 is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[31:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[31:0] are automatically three-stated whenever a Write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the Write inputs (GW, BWE, and BW[3:0]) are asserted active to conduct a Write to the desired byte(s). ADSC triggered Write accesses require a single clock cycle to complete. The address presented to A[15:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The ADV input is ignored during this cycle. If a global Write is conducted, the data presented to the DQ[31:0] is written into the corresponding address location in the RAM core. If a Byte Write is conducted, only the selected bytes are written. Bytes not selected during a Byte Write operation will remain unaltered. A Synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1329 is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ[31:0] inputs. Doing so will three-state the output drivers. As a safety precaution, DQ[31:0] are automatically three-stated whenever a Write cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1329 provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both Read and Write burst operations are supported.
Document #: 38-05279 Rev. *B
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CY7C1329
Interleaved Burst Sequence
First Address A[1:0] 00 01 10 11 Second Address A[1:0] 01 00 11 10 Third Address A[1:0] 10 11 00 01 Fourth Address A[1:0] 11 10 01 00 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation "sleep" mode. Two clock cycles are required to enter into or exit from this "sleep" mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the "sleep" mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the "sleep" mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.
Linear Burst Sequence
First Address A[1:0] 00 01 10 11 Second Address A[1:0] 01 10 11 00 Third Address A[1:0] 10 11 00 01 Fourth Address A[1:0] 11 00 01 10
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC Description Snooze mode standby current Device operation to ZZ ZZ recovery time Test Conditions ZZ > VDD - 0.2V ZZ > VDD - 0.2V ZZ < 0.2V 2tCYC Min. Max. 3 2tCYC Unit mA ns ns
Cycle Descriptions [1,2,3]
Next Cycle Unselected Unselected Unselected Unselected Unselected Begin Read Begin Read Continue Read Continue Read Continue Read Continue Read Suspend Read Suspend Read Suspend Read Suspend Read Begin Write Add. Used None None None None None External External Next Next Next Next Current Current Current Current Current ZZ L L L L L L L L L L L L L L L L CE3 X 1 X 1 X 0 0 X X X X X X X X X CE2 X X 0 X 0 1 1 X X X X X X X X X CE1 1 0 0 0 0 0 0 X X 1 1 X X 1 1 X ADSP X 0 0 1 1 0 1 1 1 X X 1 1 X X 1 ADSC 0 X X 0 0 X 0 1 1 1 1 1 1 1 1 1 ADV X X X X X X X 0 0 0 0 1 1 1 1 1 OE X X X X X X X 1 0 1 0 1 0 1 0 X DQ Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DQ Hi-Z DQ Hi-Z DQ Hi-Z DQ Hi-Z Write X X X X X X Read Read Read Read Read Read Read Read Read Write
Notes: 1. X = "Don't Care," 1 = HIGH, 0 = LOW. 2. Write is defined by BWE, BW[3:0], and GW. See Write Cycle Descriptions table. 3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
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CY7C1329
Cycle Descriptions (continued)[1,2,3]
Next Cycle Begin Write Begin Write Continue Write Continue Write Suspend Write Suspend Write ZZ "sleep" Add. Used Current External Next Next Current Current None ZZ L L L L L L H CE3 X 0 X X X X X CE2 X 1 X X X X X CE1 1 0 X 1 X 1 X ADSP X 1 1 X 1 X X ADSC 1 0 1 1 1 1 X ADV 1 X 0 0 1 1 X OE X X X X X X X DQ Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Write Write Write Write Write Write Write X
Write Cycle Descriptions[4,5,6]
Function Read Read Write Byte 0 - DQ[7:0] Write Byte 1 - DQ[15:8] Write Bytes 1, 0 Write Byte 2 - DQ[23:16] Write Bytes 2, 0 Write Bytes 2, 1 Write Bytes 2, 1, 0 Write Byte 3 - DQ[31:24] Write Bytes 3, 0 Write Bytes 3, 1 Write Bytes 3, 1, 0 Write Bytes 3, 2 Write Bytes 3, 2, 0 Write Bytes 3, 2, 1 Write All Bytes Write All Bytes GW 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 BWE 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 X BW3 X 1 1 1 1 11 1 1 1 0 0 0 0 0 0 0 0 X BW2 X 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 X BW1 X 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 X BW0 X 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 X
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CY7C1329
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... -65C to +150C Ambient Temperature with Power Applied.................................................. -55C to +125C Supply Voltage on VDD Relative to GND.........-0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[7] .....................................-0.5V to VDDQ + 0.5V DC Input Voltage[7] ..................................-0.5V to VDDQ + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA
Operating Range
Range Commercial Industrial Ambient Temperature[8] 0C to +70C -40C to +85C VDD VDDQ 3.3V 3.3V -5%/+10% -5%/+10%
Electrical Characteristics Over the Operating Range
Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[7] GND VI VDDQ Input Load Current Except ZZ and MODE 3.3V -5%/+10% 3.3V -5%/+10% VDD = Min., IOH = -4.0 mA VDD = Min., IOL = 8.0 mA 2.0 -0.3 -5 -30 5 -5 30 -5 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz All speeds 5 325 260 60 50 5 Test Conditions Min. 3.135 3.135 2.4 0.4 VDDQ + 0.3V 0.8 5 Max. 3.6 3.6 Unit V V V V V V A A A A A A mA mA mA mA mA
Input Current of MODE Input = VSS Input = VDDQ Input Current of ZZ IOZ IDD ISB1 Output Leakage Current VDD Operating Supply Current Automatic CS Power-down Current--TTL Inputs Input = VSS Input = VDDQ GND VI VDDQ, Output Disabled VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC Max. VDD, Device Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC
ISB2
Automatic CS Max. VDD, Device Deselected, Power-down VIN 0.3V or VIN > VDDQ - 0.3V, Current--CMOS Inputs f = 0 Automatic CS Max. VDD, Device Deselected, or Power-down VIN 0.3V or VIN > VDDQ - 0.3V Current--CMOS Inputs f = fMAX = 1/tCYC Automatic CS Power-down Current--TTL Inputs Max. VDD, Device Deselected, VIN VIH or VIN VIL, f = 0
ISB3
7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz
40 30 25
mA mA mA
ISB4
Notes: 4. X = "Don't Care," 1 = Logic HIGH, 0 = Logic LOW. 5. The SRAM always initiates a Read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW[3:0]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to three-state. OE is a "don't care" for the remainder of the Write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQ = High-Z when OE is inactive or when the device is deselected, and DQ = data when OE is active. 7. Minimum voltage equals -2.0V for pulse durations of less than 20 ns. 8. TA is the case temperature.
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CY7C1329
Capacitance[9]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VDD = 3.3V, VDDQ = 3.3V Max. 4 4 4 Unit pF pF pF
AC Test Loads and Waveforms
OUTPUT Z0 = 50 RL = 50 VL = 1.5V 3.3V OUTPUT 5 pF INCLUDING JIG AND SCOPE R = 317 ALL INPUT PULSES 3.3V R = 351 GND 10% 90%
[10]
90% 10% < 3.3 ns
< 3.3 ns
(a)
(b)
(c)
Switching Characteristics Over the Operating Range[11,12,13]
-133 Parameter tCYC tCH tCL tAS tAH tCO tDOH tADS tADH tWES tWEH tADVS tADVH tDS tDH tCES tCEH tCHZ tCLZ tEOHZ tEOLZ tEOV Clock Cycle Time Clock HIGH Clock LOW Address Set-up Before CLK Rise Address Hold After CLK Rise Data Output Valid After CLK Rise Data Output Hold After CLK Rise ADSP, ADSC Set-up Before CLK Rise ADSP, ADSC Hold After CLK Rise BWE, GW, BW[3:0] Set-up Before CLK Rise BWE, GW, BW[3:0] Hold After CLK Rise ADV Set-up Before CLK Rise ADV Hold After CLK Rise Data Input Set-up Before CLK Rise Data Input Hold After CLK Rise Chip Select Set-up Chip Select Hold After CLK Rise Clock to High-Z[12] Clock to Low-Z
[12]
-100 Max. Min. 10 3.2 3.2 2.5 0.5 4.2 5.0 2.0 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 2.5 0.5 3.5 3.5 1.5 0 5.5 0 4.2 5.0 5 Max. Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Description
Min. 7.5 1.9 1.9 1.5 0.5 1.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0
OE HIGH to Output High-Z[12, 13] OE LOW to Output Low-Z
[12, 13]
0
OE LOW to Output Valid[12]
Notes: 9. Tested initially and after any design or process changes that may affect these parameters. 10. Input waveform should have a slew rate of 1V/ns. 11. Unless otherwise noted, test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and load capacitance. Shown in (a) and (b) of AC Test Loads. 12. tCHZ, tCLZ, tEOV, tEOLZ, and tEOHZ are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 200 mV from steady-state voltage. 13. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ.
Document #: 38-05279 Rev. *B
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CY7C1329
Switching Waveforms
Write Cycle Timing[14, 15]
Single Write tCYC tCH Burst Write Pipelined Write
Unselected
CLK
tADH tADS tCL ADSP ignored with CE1 inactive
ADSP
tADS tADH
ADSC initiated Write
ADSC
tADVS tADVH
ADV
tAS
ADV Must Be Inactive for ADSP Write
WD1 tAH WD2 WD3
ADD
GW
tWS tWH tWS CE1 masks ADSP tWH
WE
tCES tCEH
CE1
tCES tCEH Unselected with CE2
CE2
CE3
tCES tCEH tDH tDS High-Z
OE
Data- High-Z In
1a 1a
2a = UNDEFINED
2b
2c
2d
3a
= DON'T CARE
Notes: 14. WE is the combination of BWE, BW[3:0] and GW to define a Write cycle (see Write Cycle Descriptions table). 15. WDx stands for Write Data to Address X.
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CY7C1329
Switching Waveforms (continued)
Read Cycle Timing[14, 16] Single Read tCYC Burst Read tCH Pipelined Read Unselected
CLK
tADS tADH tCL tADS ADSP ignored with CE1 inactive
ADSP
ADSC initiated Read
ADSC
tADVS tADH tADVH RD1 tAH RD2 RD3 Suspend Burst
ADV
tAS
ADD GW WE
tWS
tWH
tWS
tCES
tCEH
tWH
CE1 CE2
tCES tCEH
CE1 masks ADSP Unselected with CE2
CE3
tCES
OE
tCEH
tDOE tOEHZ tDOH tCO
DataOut
1a 1a tCLZ
2a
2b
2c 2c
2d
3a tCHZ
= DON'T CARE
Note: 16. RDx stands for Read Data from Address X.
= UNDEFINED
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CY7C1329
Switching Waveforms (continued)
Read/Write Cycle Timing[14,15,16, 17] Single Read tCYC Single Write tCH Burst Read Pipelined Read Unselected
CLK
tADS tADH tCL ADSP ignored with CE1 inactive
ADSP
tADS
ADSC
tADVS tADH
ADV
tAS tADVH RD1 tAH WD2 RD3
ADD
GW
tWS
tWH
tWS
WE
tCES tCEH tWH CE1 masks ADSP
CE1
CE2
tCES tCEH
CE3
tCES tCEH tDOE tOEHZ tOELZ tCO
See Note 17
OE
tDS 3a Out
tDH 3b Out 3c Out
tDOH 3d Out TCHZ
DataIn/Out
1a 1a Out
2a In = DON'T CARE
2a Out
= UNDEFINED
Note: 17. Data bus is driven by SRAM, but data is not guaranteed.
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CY7C1329
Switching Waveforms (continued) Pipeline Timing[18,19]
tCH tCYC tCL
CLK
tAS
ADD
RD1
RD2
RD3
RD4
WD1
WD2
WD3
WD4
tADS
ADSC initiated Reads
tADH
ADSC
ADSP initiated Reads
ADSP
ADV
tCES tCEH
CE1
CE
tWES tWEH
WE
ADSP ignored with CE1 HIGH tCLZ
OE
Data In/Out
tCO
1a Out
2a Out
3a Out
4a Out
1a In
2a In tDOH
3a In
4a D(C) In
Back to Back Reads = DON'T CARE
tCHZ
= UNDEFINED
Notes: 18. Device originally deselected. 19. CE is the combination of CE2 and CE3. All chip selects need to be active in order to select the device.
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CY7C1329
Switching Waveforms (continued) ZZ Mode Timing[20, 21]
CLK
ADSP
HIGH
ADSC CE1 LOW HIGH
CE2 CE3
ZZ
tZZS
IDD I/Os
IDD(active) IDDZZ Three-state
tZZREC
Ordering Information
Speed (MHz) 133 100 Ordering Code CY7C1329-133AC CY7C1329-100AC CY7C1329-100AI Package Name A101 A101 A101 Package Type 100-lead Thin Quad Flat Pack 100-lead Thin Quad Flat Pack 100-lead Thin Quad Flat Pack Industrial Operating Range Commercial
Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Description table for all possible signal conditions to deselect the device. 21. I/Os are in three-state when exiting ZZ sleep mode.
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CY7C1329
Package Diagram
100-lead Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
51-85050-*A
i486 is a trademark, and Intel and Pentium are registered trademarks, of Intel Corporation. PowerPC is a registered trademark of IBM Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05279 Rev. *B
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(c) Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1329
Document History Page
Document Title: CY7C1329 64K x 32 Synchronous-Pipelined Cache RAM Document Number:38-05279 REV. ** *A *B ECN NO 114388 114499 212291 Issue Date 03/25/02 04/11/02 See ECN Orig. of Change DSG GLC VBL Changed to 1.5 set-up Updated ordering info: added -100AI Added Industrial to Operating Range section, delete -75 from AC characteristics table Description of changes Changed from Spec number: 38-00561 to 38-05279
Document #: 38-05279 Rev. *B
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